A COMPARATIVE ANALYSIS OF FLOATING CONTACT BOTTOM GATE (FCBG) AND BOTTOM GATE BOTTOM CONTACT ORGANIC THIN FILM TRANSISTOR (OTFT)

In spectrum of organic transistors bottom gate bottom contact thin film transistors (BGBC OTFT) is commonly used in implementing combinational circuits owing to their simple fabrication and robust performance. Lately these devices are under scrutiny for their inferior output drain current levels. In order to combat this limitation various alternate structures are being proposed. However, some structures like double gate organic thin film transistors increased the drain current but incremented the fabrication steps, manufacturing cost and size of transistor. Therefore, experimentation is required to modify BGBC OTFTs in manner that their performance improved without much change in the fabrication cost and overall size of the transistor. Floating contact bottom gate organic thin film transistor (FCBG OTFT) proposed, and this research addresses the problem of drain current without altering the overall size of BGBC OTFT. FCBG OTFT offers better charge accumulation in the conducting channel and enhances the overall performance of the OTFT significantly for same voltage biasing. Output drive (drain) current obtained in FCBG OTFT is almost twice the drain current generated in conventional BGBC of same size, have material layers under same voltage bias conditions