Share Your Research, Maximize Your Social Impacts
STUDY THE SILICON OXIDE FILM WITH DIFFERENT WET CHEMICAL OXIDATION PARAMETERS TO GROW PASSIVATED CONTACT ON SILICON SOLAR CELL
Journal: International Journal of Electrical Engineering and Technology (IJEET) (Vol.13, No. 05)Publication Date: 2022-05-31
Authors : Thanh Pham Van;
Page : 85-89
Keywords : passivated contact; tunnel oxide; wet chemical oxidation;
Source : Download
Find it from : Google Scholar
Abstract
In this paper, we study the silicon oxide film(1.4nm) was grown by wet chemical oxidation method, and the change of different growing parameters in solar cell. With the heat treatment, the lifetime can be increased to 1108 us. Solar cell efficiency was improved from 10.8 % to11.5 %.
Other Latest Articles
- IMPLEMENTATION OF SAMPLED REFERENCE FRAME ALGORITHM IN 8 BIT MICROCONTROLLERS
- DESIGN OF IOT BASED SMART PILL BOX FOR HEALTHCARE APPLICATIONS
- DESIGN OF AN IOT-BASED SMALL SCALE INDOOR HYDROPONICS WITH GEO-SOLAR SYSTEM
- EFFECT OF FLUORIDE CONTAMINATION ON MICROBIAL ENZYMATIC ACTIVITY IN SOIL
- ADOPTION OF CRYPTOCURRENCY, A NOVEL ENTRANT TO ASSET CLASS: MEASURING THE PERCEPTION OF MILLENNIALS
Last modified: 2022-07-04 19:18:42