Design and Simulation of InGaAs/GaAsSb single quantum well structure for optical fiber application: Electronic Band Structure, Carrier Transport, and Optical Gain Analysis

This paper explores the electronics and optical gain characteristics of an InGaAs/GaAsSb single quantum well structure designed on a GaAs substrate at room temperature (300 K). The findings indicate that this structure can emit radiation at 1550 nm with a significantly higher gain of approximately 6300/cm, rendering it suitable for optical fiber communication and optics applications such as WDM/DWDM for long-haul fiber transmission. This work contributes to advancing the field of optoelectronics by providing a promising solution for efficient NIR wavelength emission with substantial optical gain.