POSSIBILITIES OF LOW-ENERGY ION IMPLANTATION IN OBTAINING NANOMATERIALS

The implantation of medium and high energy beams is used for the formation of p- or n-type compounds in semiconductors. In recent years, they have also been used to obtain nanodots in deep layers. Low-energy ion implantation is mainly used to modify the surface layers of solids, and to obtain nanophases, nanoclusters, nanocrystals, and nanofilms