COMPARISON OF GDI BASED D FLIP FLOP CIRCUITS USING 90NM AND 180NM TECHNOLOGYJournal: International Journal of Engineering Sciences & Research Technology (IJESRT) (Vol.5, No. 3)
Publication Date: 2016-03-30
Authors : Gurwinder Singh; Ramanjeet Singh;
Page : 689-694
Keywords : KEYWORDS: D flip-flop; low power; Gate-Diffusion-Input (GDI) technique.;
Energy performance requirements are forcing designers of next-generation systems to explore approaches to lease possible power consumption. Power consumption is majorly affected by power supply voltage. Scaling of power supply voltage is major factor to reduce power consumption. The technique to achieve ultra-low power is to operate the circuit with supply voltage less than threshold voltage. The region where supply voltage is less than threshold voltage is called sub threshold region. Ultra-low power consumption can be achieved by operating digital circuits at sub threshold region. Here proposed sub threshold circuit is based on GDI (Gate Diffusion Input) technique. GDI technique allows reducing power consumption, delay, area of the digital circuit while maintaining low complexity of logic design as compared to other CMOS (Complementary Metal Oxide Semiconductor) circuits. In this article a new implementation of efficient D-Flip-Flop (DFF) using Gate-Diffusion-Input (GDI) technique, is presented. This DFF design allows reducing power-delay product and area of the circuit, while maintaining low complexity of logic design. Performance comparison with other DFF design techniques is presented, with respect to gate area, number of devices, delay and power dissipation, showing advantages and drawbacks of GDI DFF, as compared to other methods. A D-flip-flop is proposed by using different technologies for VLSI system for making high performance processing element. The performance is carried out by tanner tool.
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Last modified: 2016-03-27 18:26:50