RECOMBINATIONAL PROCESSES OF CREATION OF FRENKEL DEFECTS IN CRYSTALS NaClJournal: The Way of Science (Vol.1, No. 12)
Publication Date: 2015-02-28
Authors : Baymakhanuly A.; Ospanbekov E.; Pustovarov V.A.;
Page : 12-14
Keywords : crystal; defect; electron; hole; radiation; laser.;
Creation of Frenkel defects (F - H pairs) due to the recombination of hot electrons with holes has been revealed in the volume of NaCl single crystals. The irradiation of NaCl (Eg =8.4 eV) at 300 K by the radiation of ArF laser (6.24 eV) in two-photon absorption regime (Eexc=12.84 eV) leads to the effective formation of hot electrons and holes. The sequent recombination of hot carriers at 300 K causes the creation of stable F centers (absorption at 2.65 eV) and trihalide molecules (absorption at about 5.8 eV) formed at the pair association of mobile H interstitials. The creation efficiency of F and H centers by an electron beam (8 кeV) at 6 K is low. The thermally stimulated recombinations at 35 K of F and H centers is accompanied by the 3.3 eV triplet luminescence of self-trapped excitons.
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