STRUCTURAL PERFECTION OF HETEROEPITAXIAL GAXIN1-XP/GAP (0,6 ? X ? 1,0) LAYERS GROWN FROM LIQUID PHASE

The structural perfections of the heteroepitaxial layers Ga X In 1 - X P expressed on substrates GaP are investigated. It is revealed, that introduction of two buffer layers Ga X In 1 - X P with x? 0,8 and x?0,9 in intermediate with an area substrate reduces density of a disposition more than 10 times due to parameter mismatch attenuation of a lattice of heteropairs up to 0,73... 0,75 %.