ResearchBib Share Your Research, Maximize Your Social Impacts
Sign for Notice Everyday Sign up >> Login

IMPURITY-IMPURITY INTERACTION OF FERRUM AND HAFNIUM IN SILICON

Journal: Science and world (Vol.1, No. 43)

Publication Date:

Authors : ;

Page : 30-32

Keywords : interaction; doping; ferrum; hafnium; deep level; efficiency of levels formation; decontamination levels.;

Source : Downloadexternal Find it from : Google Scholarexternal

Abstract

By means of non-stationary capacitance spectroscopy of deep levels the interaction of technological impurity of Fe with Hf-atoms in Si is investigated. It is shown, that presence of Hf at Si volume leads to deactivation of Fe-atoms with their transition to any inactive drains and interferes with formation of deep levels of Fe.

Last modified: 2017-05-31 17:50:05