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IMPURITY-IMPURITY INTERACTION OF FERRUM AND HAFNIUM IN SILICON
Journal: Science and world (Vol.1, No. 43)Publication Date: 2017-03-24
Authors : Utamuradova Sh.B.;
Page : 30-32
Keywords : interaction; doping; ferrum; hafnium; deep level; efficiency of levels formation; decontamination levels.;
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Abstract
By means of non-stationary capacitance spectroscopy of deep levels the interaction of technological impurity of Fe with Hf-atoms in Si is investigated. It is shown, that presence of Hf at Si volume leads to deactivation of Fe-atoms with their transition to any inactive drains and interferes with formation of deep levels of Fe.
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Last modified: 2017-05-31 17:50:05