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ON THE FEATURES OF FORMATION OF IRRADIATION DEFECTS IN SILICON WITH HOLMIUM IMPURITY
Journal: Science and world (Vol.1, No. 44)Publication Date: 2017-04-20
Authors : Utamuradova Sh.B.;
Page : 29-31
Keywords : semiconductor; silicon; doping; holmium; irradiation; irradiation defect.;
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Abstract
By the DLTS method we investigated the processes of irradiation defect formation in the silicon with holmium impurity irradiated by -quanta 60Со. It is shown that the presence of holmium in silicon volume interferes with formation of irradiation defects: depending on the content of holmium and oxygen concentration irradiation defect (A- and E-centers) is 0.5-1.0-th orders less, than in control samples.
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Last modified: 2017-06-01 17:12:15