RADIATION DETECT FORMATION IN SILICON DOPED WITH SAMARIUM

Using DLTS methods we studied the influence of the samarium atoms introduced into the silicon in the process of growing from melt, on the efficiency of radiation defects formation. It is shown that in the result of  - irradiation in samples Si with a high content of oxygen, the irradiation defect with an ionization energy of Ec - 0.17 eV is (complexes V+O) is developed and in samples with low oxygen content 2 deep levels are observed: Ec-0,17 eV and Ev - 0.43 eV, and the dominant is the second level (complexes V+P).