EFFECT OF CHEMICAL PROCESSING ON THE SURFACE AND CHARACTERISTICS OF SEMICONDUCTORS TYPE A3B5

The effect of chemical treatment of a surface disturbed layer on the current-voltage characteristics of forward and reverse currents and on the photoelectric properties of p-n junctions based on GaAs is studied. Surface treatment of A3B5 semiconductors was carried out by applying an aqueous solution of sodium sulphide. The analysis of the work showed that such processing of the data of p-n junction leads to a decrease in the rate of surface recombination, and, accordingly, to a decrease in the forward and reverse currents.