THE INFRARED SPECTROSCOPY OF SILICON DOPED WITH MOLYBDENUM

The interaction of molybdenum atoms with technological impurities – oxygen and carbon in silicon using the infra-red absorption method is studied. It was found that high-temperature diffusion of molybdenum in Si leads to a decrease in the concentration of optically active oxygen NOopt for 20-30 %. A partial recovery of NOopt at the subsequent high-temperature treatment was found, which is associated with the decay of the alleged complexes of molybdenum atoms with technological impurities and activation of Mo atoms