ACTIVATION OF THE CHROMIUM ATOMS IN SILICON BY LASER IRRADIATION

In this paper, the effect of laser radiation on the properties of n-Si is investigated. It was found that treatment of laser radiation of chromium doped silicon during growth leads to activation of Cr atoms with the formation of two deep levels with Ec-0.41 eV and Ec-0.51 eV ionization energies in n-Si. It is shown that with the increase in laser energy, the concentration of deep chromium levels is increased.