THE EFFECT OF ANNEALING ON A CRYSTAL STRUCTURE OF SILICON SURFACE DOPED BY NICKEL IONS

The profiles of distribution of implanted atom nickel atoms in silicon depending on radiation dose and annealing temperature by means of Rutherford backscattering are given. The influence of thermal annealing on distribution of nickel and other impurities, in particular oxygen, is investigated. It is proved that under certain conditions of heat treatment and radiation dose the crystal structure of a so-called epitaxial silicides are formed, which can play the role of the conductive layers or metallic coatings. The possibility of use of Rutherford backscattering for analyzing both of concentration distribution of doped impurities and the interaction of impurities is noted