INVESTIGATION ON CNT BASED TRANSISTOR WITH COMPARATIVE ANALYSIS OF ZnO & Al2O3 AS GATE DIELECTRICS

The present study investigates on the single walled carbon nano tube (CNT) based transistor and with comparative analysis of Zinc Oxide (ZnO) and Aluminium Oxide (Al2O3) as gate dielectric films. Structural properties of these gate dielectric films were analysed and reported. Array network of single walled carbon nanotube (SWCNT) was formed as a channel in field effect transistor (FET) by drop casting method. At room temperature gate dielectric (ZnO and Al2O3) films were deposited by using pulsed laser deposition. Various electrical parameters were analysed for the fabricated SWCNT/Al2O3 and SWCNT/ZnO FET's. The achieved threshold voltage (VTH), ION and IOFF are 0.6 Volts, -2.88mA and -2.19mA was observed for CNT/Al2O3 FET and 0.2Volts, -2.19mA and -4.99mA was observed for CNT/ZnO FET respectively.