Crystallization Mechanism and Thermal Stability of Se98 In2-χ Snχ (χ=0.0.5,1,1.5) Semiconducting Glasses

Results of Differential Scanning Calorimeter (DSC) under non isothermal condition on Se98 In2-χ Snχ (χ=0.0.5,1,1.5) chalcogenide glasses have been reported and discussed. ln the glassy region, the dependence of the glass transition temperature Tg on the heating rate or obey a power law, Tg=To{ɑ}ʏ ,and the glass transition activation energy decreases with the addition of Sn. The crystal growth kinetics has been investigated using Kissinger, Gao et.al, and Ozawa equations. Results indicate that the crystallization activation energy decreases and the crystallization ability is retarded, due to the formation of cross-linked structure, with the addition of Sn. Besides to that the crystal growth is found to occur in 2-dimensions. Investigation of thermal stability through the calculations of the temperature difference TC-Tg, S-parameter, Hruby number, crystallization rate factor and the enthalpy released during the crystallization process, indicates that Se98 In0.5 Sn1.5 glass is thermally most stable in the composition range of study