HIGH PERFORMANCE CNT BASED NANOELECTRONIC CIRCUITS: AN ANALYSIS

Carbon Nano Tubes (CNTs) with their unique electronic and geometric features have emerged as candidates in next generation high-performance nano-electronics application. CNTs have played a significant role in overcoming the challenges of scaling process of traditional silicon/conventional MOS based devices and therefore, carbon nanotube field effect transistor (CNTFET) based circuit development has been boosted in recent years. The present review encompasses inquisitive assessment of CNTs and its application in designing of CNTFET based circuits in nano-electronics. Recently reported CNTFET based nanoelectronic circuits like three stage operational amplifiers (OP AMP), novel operational trans-conductance amplifier (OTA), universal logic circuits, tristate buffer, Cascode Operational Transconductance Amplifiers (COTA), folded cascode operational transconductance amplifiers (FCOTAs), Ternary Full Adder Cell and pure CNT based multistage operational amplifier, as well as improvement in their performance parameters (DC gain, output resistance, slew rate, average power, speed and power consumption) as compared to respective MOS based circuits have been extensively reviewed. In order to harness the high quality intrinsic features of CNTs further investigations of nanotube-basedelectronics are anticipated and considered as future perspective beyond silicon-basedelectronics.