High Performance AlGaN Metal-Semiconductor-Metal Ultraviolet Photo Detectors

In this paper, we present Al0.25Ga0.75N ultraviolet Schottky barrier photodetectors on Al2O3, that was modeled using The two-dimensional device simulator Silvaco and ATLAS. It was found that the device has very low dark current, with the applied bias below 1 V, the dark current was below 16 pA and the peak responsivity of 0.07A/W was achieved at 308nm. We have performed a comparison between our modeling and the experimental results.