Effect of Doping on Properties of the Hall Effect and Electrical Conductivity for AgInTe2 Thin Films

The effect of different doping ratio (0.3, 0.5, and 0.7) with thickness in the range 300nm and annealed at different temp. (Ta=RT, 473, 573, 673) K on the electrical conductivity and hall effect measurements of AgInTe2 thin film have and been investigated AgAlxIn (1-x) Te2 (AAIT) at RT, using thermal evaporation technique all the films were prepared on glass substrates from the alloy of the compound Electrical conductivity (), the activation energies (Ea1, Ea2), Hall mobility and the carrier concentration are investigated as a function of doping. All films consist of two types of transport mechanisms for free carriers. The activation energy (Ea) decreased whereas electrical conductivity increase with increased doping. Results of Hall Effect Analysis of (AAIT) films show that the kind of all films were (p-type) and both the carrier concentration and hall mobility increase with increased the doping of the film.