Characterization of Nanorods Obtained by Mixing 20%SnO2 + 80% In2O3 Thin Films Prepared by Sol-Gel Method
Journal: International Journal of Science and Research (IJSR) (Vol.4, No. 1)Publication Date: 2015-01-05
Authors : Melia Hamici; Adel Hachache;
Page : 1728-1732
Keywords : In2O3; SnO2; thins films; square resistance; morphological properties; XRD analysis; AFM images;
Abstract
In this work a mixing SnO2and In2O3 precursors solutions were prepared by sol-gel method. About this mixture, thin films were elaborated by dip coating and were followed by annealing in air. Nanorods were obtained and were appeared for 20 % SnO2+ 80 % In2O3 of mixture. The morphology composition and structure layers were studies by scanning electron microscopy and X ray diffraction. The optical transmission of these films is in the order of (up to 95 %), with a band gap of 3.27eV. The best film showed a significant decrease of its square resistance R (down to12 /). This result is an excellent value obtained by sol-gel method.
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