CNTFET Based Circuit Performance over CMOS in Logic Gates

Carbon nanotubes (CNTs) exhibit high current handling capability, higher thermal and electrical conductivity and higher transport properties, presently the Carbon nanotube technology are be the best competitor and alternative of conventionally used Complementary metal oxide semiconductor technology (CMOS). In this paper, CNT based field effect transistors known as CNTFET is compared with the conventionally used silicon based technology MOSFETs on the basis of circuit level performance. Those two technologies are compared with simulation work performed on logic families such as inverter, logic gates NAND and NOR. We used gate length of 32nm for both MOSFET and CNTFET. The results of simulation conclude that in CNTFET based logic gates, leakage power and power delay product are lower and the delay is about 10times lower, compared to the MOSFET based devices such as logic gates. These excellent performances characteristics with different variations are also exhibit excellent robustness.