Effect Bath Temperature of CdSe Thin Films Growing by Electrochemical Deposition

Thin film CdSe compound semiconductors have been deposited by electrochemical deposition on indium doped tin oxide (ITO) coated glass substrates under controlled temperature ranging from room temperature to 70?C. For the as-deposited thin films, the GAXRD analysis revealed a uniform cubic phase of CdSe thin films with preferred orientation along the (200) plane and the calculated crystallite size was found to be 80 to 175nm using by Scherer method. The SEM micrographs showed that the film surface was composed of spherically shaped grains. Optical studies revealed that the as-deposited CdSe thin films have direct band transition whose value decreased from 1.68 to 1.77 eV bath temperature decreases. All different bath temperature obtained CdSe thin films have shown n-type conductivity. The effects of bath temperature on structural, morphological, optical and electrical properties of CdSe thin films were studied.