Share Your Research, Maximize Your Social Impacts
Bond length Distortion in III - V Semiconductors
Journal: International Journal of Science and Research (IJSR) (Vol.11, No. 5)Publication Date: 2022-05-05
Authors : Kalyan Singh; P. K. Sharma;
Page : 737-738
Keywords : semiconductors; bond length; impurity atom and host atom;
Source : Download
Find it from : Google Scholar
Abstract
Semiconductors are present in periodic table of Group III - V. In this paper, impurities doped with Al- series and Ga-Series such as AlP, AlAs, AlSb and GaP, GaAs, GaSb. The value of distorted bond length found corresponds with orbital parameter, covalance and empirical parameter ang hybrid energy used as input data.
Other Latest Articles
- Parental Involvement and Pupils' Welfare in Government-Aided Primary Schools in Kalongo Sub-County in Nakasongola District - Uganda
- Surveying the Synthesis of 2H-benzo[b][1,4]oxazin-3(4H)-ones and Related Analogs
- Academic Performance and Competencies of Grade VI Pupils in Technology and Livelihood Education (TLE) in the New Normal
- A Model of the Propagation Endemic of Emerging Infectious Diseases SEPI
- Effectiveness of Structured Teaching Programme on Viral Disease and their Prevention among Mothers of under Five Children
Last modified: 2022-09-07 15:14:21