Carbon Nanotubes Photoconductive Detector in Near- Infrared Region

ABSTRACT Carbon nanotubes (MWCNTs, SWCNTs) were utilized to manufacture near?infrared photoconductive detector. Porous silicon (Si) was utilized as a substrate to deposit CNTs by the drop casting system. The CNTs carrier concentration, conductivity and carrier mobility were measured. Different sorts CNTs photodetectors show a good photoconductive performance at wavelength (980-1200nm) particularly SWCNTs, responsivity was found to be (0.0199A.W-1) and specific detectivity (D*) 2.36×107 cm .Hz1/2.W-1and response time 2.5ns.