Growth And Characterization Of Sulphanillic Acid Single Crystal From Vapor

Abstract - There have been many contributors to the art of growing single crystals and varied ingenious techniques have been applied to the problem. Despite the substantial advance in the theory of crystal growth in practice the growth of a large single crystal must still be approached from the empirical viewpoint. Crystal growth is seldom susceptible to observation during growth. This generally means that the proper growth conditions must be determine by trial error and once determined means must be available for reproducing these optimum conditions whenever desired. The system must be stable since there is seldom any convenient away for the operator to observe the growing process and compensate for deviation from the ideal growth conditions. The shape of the grown crystal is a result of contributions from lattice force surface tension pull rate and temperature gradients in the crystal. The shape of the cross section perpendicular to the growth direction is determined by a balance between lattice force which tends to form equilibrium faces and surface tension which tends to make the cross section circular. The average diameter of the crystal is determined by the rate of pull and thermal gradient in the crystal. Growth from vapor has many experimental advantages to recommend it. If a suitable solvent can be found crystal growing can be performed at temperatures well below the melting point of the crystal often at room temperature. These low temperature place much less demand on furnaces and power supplies. In addition the reactivity of the solute may be greatly moderate not only by the low temperature but also by the dilution with the solvent. The three techniques usually employed are change in temperature evaporation of solvent and addition of solute. The difficulty of controlling the temperature gradients in solution also means that a large volume of solution surrounding the crystal will be supersaturated and labile with respect to growth. The great caution is required in assuring that no spurious nuclei are present. In all subsequent show our growth the main features and study on crystal of this materials.