EFFECT OF NITROGEN CONCENTRATION ON THE OPTICAL AND ELECTRICAL PERFORMANCE OF GA0.66IN0.34NYAS1-Y/GAAS QUANTUM WELL LASER DIODES

Design optimization of Ga0.66In0.34NyAs1-y quantum well (QW) for long wavelength semiconductor laser is conducted by using RSoft LaserMOD. The effect of different nitrogen (N) concentration ranging from 2.0 to 3.2 % with a stepped of 0.3 % in Ga0.66In0.34NyAs1-y QW system is investigated in term of its electrical and optical performances. It was found that the increment of N concentration up to 2.6% significantly elongating the emission of lasing wavelength (λ) up to 1.44 μm, elevating the output power (Pout) to 83.5 mW and reducing the threshold current density (Jth) to 431.25 A/cm2