DESIGN AND SIMULATION OF SUPER HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON GAN USING THE POLARIZATION JUNCTION CONCEPT

In GaN Based Super Hetreojunction Field Effect Transistors a 2 Dimensional Hole Gas (DHG) is formed in addition to the 2 Dimensional Electron Gas. The positive and negative charges due to the polarization nullify each other resulting in a flat electric field which enhances the characteristic of the device. The device is a depletion mode device with a threshold of - 3V. The I ON /I OFF of the device is 10 6