The Photoconductivity and Photosensitivity of Pure and Doped Amorphous Gex Si1-x: H Thin Films

ABSTRACT The influence of light intensity on the photoconductivity and photosensitivity of the hydrogenated amorphous pure and doped GexSi1-x thin films (a-GexSi1-x: H) deposited under various deposition conditions such as Ge content (x= 0?1) and atomic percentage of Al and As dopants (0.5%?3.5%) had been investigated. Hydrogenated amorphous GexSi1-x thin films (a-GexSi1-x: H) were deposited from prepared a polycrystalline GexSi1-x alloys with various x (0-1) on glass substrates by a thermal evaporation method. All prepared types films were sensitive to light, whereas p-type film was more sensitive than the n-type and pure films. The increase in Ge content caused decreased in photoconductuvity and photosensitivity of prepared GexSi1-x films. Keywords: pure and doped a-GeSi:H thin film, thermal evaporation, photoconductivity and photosensitivity.