Electrical Characterization of Al/n-CdTe/NiCr Schottky Diodes

Schottky barriers of Al /n-CdTe/ NiCr structures have been prepared and was studied. The films were prepared by thermal evaporation with different thicknesses (400, 600 and 1000) nm at 273Kand annealed at 373K and 473K through 30 min. Schottky barrier characteristics (J-V) and (C-V) have showed that the rectification properties and barrier height increases with the increasing thickness and annealing temperatures, while saturation current density and the ideality factor was decreased. Photovoltaic effect of these junctions was very poor and fill factor relatively low. high defect density, presence of an interfacial layer, low doping concentration are perceived to affect the J?V characteristic.