EXCITON BINDING ENERGY IN BULK AND QUANTUM WELL OF SEMICONDUCTORS WITH NON - PARABOLIC ENERGY BANDSJournal: International Journal of Engineering Sciences & Research Technology (IJESRT) (Vol.5, No. 11)
Publication Date: 2016-11-30
Authors : Payal Bhardwaj; Nupur Das;
Page : 289-294
Keywords : Exciton; Binding Energy; Band non - parabolicity; III - V semiconductors.;
We estimate Bohr radius and binding energy of exciton in bulk as well as quantum well for semiconductors with non - parabolic energy band structure. Kane type dispersion relation is used to incorporate such band non - parabolicity. Exciton binding energy in various III - V semiconductors are calculated for two different expressions of non - parabolicit y factor α, and results are compared with those for parabolic energy bands. In presence of band non - parabolicity, exciton binding energies are found to increase in quantum wells, whereas such variation is almost insignificant in bulk semiconductors.
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