EXCITON BINDING ENERGY IN BULK AND QUANTUM WELL OF SEMICONDUCTORS WITH NON - PARABOLIC ENERGY BANDS

We estimate Bohr radius and binding energy of exciton in bulk as well as quantum well for semiconductors with non - parabolic energy band structure. Kane type dispersion relation is used to incorporate such band non - parabolicity. Exciton binding energy in various III - V semiconductors are calculated for two different expressions of non - parabolicit y factor α, and results are compared with those for parabolic energy bands. In presence of band non - parabolicity, exciton binding energies are found to increase in quantum wells, whereas such variation is almost insignificant in bulk semiconductors.