MIS-STRUCTURES BASED ON NEUTRON-TRANSMUTATION DOPED SILICON

The influence of thermal treatment on the parameters of MIS-structures based on neutrontransmutation doped silicon is investigated. It was revealed that low-temperature treatment in the range of 100-400oC leads to decrease in the surface-state density Nss in the mid-gap of silicon. It is shown that the formation of the inversion layer in such structures after heat treatment increases by 3-5 times compared with the MIS structures on the basis of conventional Si.