MIS-STRUCTURES BASED ON NEUTRON-TRANSMUTATION DOPED SILICONJournal: Science and world (Vol.1, No. 43)
Publication Date: 2017-03-24
Authors : Daliev Kh.S.;
Page : 18-20
Keywords : capacitance spectroscopy; MIS-structure; neutron-transmutation doping; interface Si-SiO2; oxide layer SiO2.;
The influence of thermal treatment on the parameters of MIS-structures based on neutrontransmutation doped silicon is investigated. It was revealed that low-temperature treatment in the range of 100-400oC leads to decrease in the surface-state density Nss in the mid-gap of silicon. It is shown that the formation of the inversion layer in such structures after heat treatment increases by 3-5 times compared with the MIS structures on the basis of conventional Si.
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