Design and Implementation of High Speed and Low Power Consumption FinFET

Journal: International Journal of Science and Research (IJSR) (Vol.6, No. 5)

Publication Date: 2017-05-05

Authors : Ragini Soni; Jyotsna Sagar;

Page : 1133-1136

Keywords : DIBL; etches; FinFET; GIDL; hysteretic threshold; Mosfet;

Source : Download Find it from : Google Scholar

Abstract

An application of FinFET Technology has opened new development in Nano-technology. Simulations show that FinFET structure should be scalable down to 10 nm. Formation of ultra thin fin enables suppressed short channel effects.

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Design and Implementation of High Speed and Low Power Consumption FinFET

Abstract

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