8Kb Logic Compatible DRAM based Memory Design for Low Power Systems

8Kb DRAM based memory is implemented for low power systems.3T DRAM gain cell utilizing preferential boosting is used to achieve large data retention time and low leakage current which contributes to low power consumption. Current mode sense amplifier is designed for read operation to achieve high speed which gives output in voltage mode. There are two 4Kb sections in memory architecture which are controlled by internal control circuitry. This architecture has simplest write back circuitry. This Design performs all specific memory functions. This test memory has 20 pins. This design is done in 180nm CMOS technology