A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors

The paper proposes a new analytical model of the drain current in AlGaN-GaN high-electron-mobility transistors (HEMT) on the basis of a polynomial expression for the Fermi level as a function of the concentration of charge carriers. The study investigated the influence of parasitic resistances (source and drain sides), high-speed saturation, the amount of aluminum in the AlGaN barrier, and low field mobility. To isolate the output characteristics, cut-off frequency and steepness, the parameters of the hyper frequency signal were developed. Comparison of analytical calculations with experimental measurements confirmed the validity of the proposed model.