Influence of the Composition of (TlGaS2)1-х(TlInSe2)x Alloys on Their Physical Properties

The single crystals of (TlGaS2)1-х(TlInSe2)х (х = 0?0,5) solid solutions have been grown up. The photoelectric, roentgendosimetric, dielectric and optical characteristics of the (TlGaS2)1-х(TlInSe2)х solid solutions with various compositions have been determined. The maximum and spectral range of photosensitivity were found to redshift as x increases from 0 to 0.5. Both the photo- and roentgensensitivity of the solid solutions are higher than those of pure TlGaS2. The nature of dielectric losses and the hopping mechanism of charge transport in the (TlGaS2)1-х(TlInSe2)х solid solutions were established from the experimental results on high-frequency dielectric measurements. The temperature dependences of exciton peak position for various compositions (x = 0-0.3) are investigated in 77-180 K temperature interval. It was established that with increasing x in (TlGaS2)1-х(TlInSe2)х solid solutions the width of their forbidden gap decreases.