Variation of activation energy and Instability in resistance with different thickness of CdSe0.75Te0.25 thin films by spray pyrolysis

ABSTRACT II-VI group of compound is a transparent semiconductor. In the study of CdSe0.75Te0.25 thin films prepared by spray pyrolysis at 3500C. From the resistivity versus inverse temperature graph we conclude that activation energy value increases if the thickness of the films increases. This indicates grain boundary width decreases and depth of impurity levels reduced.