INFLUENCE OF THE PVD PROCESS PARAMETERS ON ZnO: Al THIN FILMSJournal: Applied Engineering Letters (Vol.2, No. 1)
Publication Date: 2017-03-31
Authors : P. Boryło; K. Matus; K. Lukaszkowicz; M. Szindler; K. Gołombek;
Page : 1-5
Keywords : TCL; MZO; PVD; ZnO:Al; SEM; AFM;
In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others. The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers' surface topography determined with atomic force microscope and results of chemical composition analyses.
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