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METHOD OF IRSI - SI THIN CONTACTS OBTAINING AND NANOSYSTEMS GENERATION
Journal: Science and world (Vol.1, No. 1)Publication Date: 2013-09-28
Authors : Kerimov E.A.;
Page : 18-21
Keywords : Schottky barrier; annealing; photosensitivity; potential barrier; Fauler formula; silicides; substrate;
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Abstract
Installation for obtaining IrSi - Si thin films and principle its working in given mode are fully described in the article. Also, methods of manipulating of atoms adsorbed on the surface of the material are introduced.
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