INFLUENCE OF -RADIATION PROPERTIES OF WOLFRAMIUM LEVELS IN SILICON

By means of methods of capacity spectroscopy, the processes of radiation defect formation in Si with wolframium impurity are investigated. It is established that radiation of 60Со by -quanta does not exert noticeable influence on parameters of deep levels (energy of ionization Et and electron-capture cross section n) in n-Si, but there is a transformation of ranges DLTS with growth of radiation dose Ф>1.1018 quantum/cm2 ·s. It is shown that presence of wolframium atoms at silicon at -radiation leads to reduction in the rate of introduction of the A-center by 3-4 times in comparison with control samples and interferes with formation of the E-centers. It is established that the efficiency of formation of radiation defect depends also on content of optically active interstitial oxygen No опт.