INFLUENCE OF -RADIATION PROPERTIES OF WOLFRAMIUM LEVELS IN SILICON
Journal: Science and world (Vol.1, No. 62)Publication Date: 2018-10-25
Authors : Daliev Sh.Kh. Paluanova A.D.;
Page : 28-31
Keywords : silicon; impurity; wolframium; deep level; radiation; -quanta; radiation dose; radiation defect.;
Abstract
By means of methods of capacity spectroscopy, the processes of radiation defect formation in Si with wolframium impurity are investigated. It is established that radiation of 60Со by -quanta does not exert noticeable influence on parameters of deep levels (energy of ionization Et and electron-capture cross section n) in n-Si, but there is a transformation of ranges DLTS with growth of radiation dose Ф>1.1018 quantum/cm2 ·s. It is shown that presence of wolframium atoms at silicon at -radiation leads to reduction in the rate of introduction of the A-center by 3-4 times in comparison with control samples and interferes with formation of the E-centers. It is established that the efficiency of formation of radiation defect depends also on content of optically active interstitial oxygen No опт.
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