INFLUENCE OF HEAT TREATMENT ON DEVELOPMENT OF DEFECT STRUCTURE OF THE SILICON DOPED WITH CHROME

Influence of heat treatment on development of defect structure of Si doped with Cr at growth from the melt is investigated. It is established that the Cr atoms, entered into Si at its growth, are electrically neutral. It is shown that high-temperature treatment (HTT) in the range of 1000-1200 °C of n-Si samples leads to activation of Cr atoms with formation of deep levels of Ес-0.41 eV and Ес-0.51 eV. It is revealed that insufficient cleaning of surface of n-Si samples before the HTT leads to emergence of new level of Ес-0.30 eV, which is followed by synchronous changes of concentration of level Ес-0.41 eV.