TWO-DIMENSIONAL SIMULATION OF A DEVICE FOR CHARGE TRANSFER OPERATING AT 77K: TRANSFER INEFFICIENCY

This work is concerned with the development and operation of a computer simulation program to calculate the transfer inefficiency in charge transfer devices (C.T.D) silicon surface channel operating at the temperature of liquid nitrogen. This program is intended to reflect induced disturbances on an elementary transfer by fixed charges located at the oxide - canal interface, mainly in the inter - electrode space. It allows taking into account the gate structure as well as different values of the signal charge to be transferred.