Influence of the Depth base on the Electrical parameters of a Parallel Vertical Junction Silicon Solar Cell under Polychromatic illumination

ABSTRACT In this paper, influence of the depth in the base on the Electrical parameters of a Parallel Vertical Junction Silicon Solar Cell under Polychromatic illumination. From the excess minority carrier’s density in solar cell, the photocurrent density the photovoltage and the capacitance are determined and studied for various depth in the base. From the I-V characteristic, the series and shunt resistances are determined for different values of the depth in the base. Keywords: parallel vertical junction ? depth z ? series and shunt resistances.