THE INFLUENCE OF TITANIUM ON THE PROPERTIES OF THE VOLUME AND INTERFACE OF Si-SiO2 OF SILICON MIS-STRUCTURESJournal: Science and world (Vol.1, No. 43)
Publication Date: 2017-03-24
Authors : Daliev Sh.Kh.;
Page : 21-23
Keywords : silicon MIS-structure; titanium impurities; deep level; doping; ionization energy.;
Using the methods of non-stationary capacitance spectroscopy and high-frequency capacitancevoltage characteristics the influence of titanium on the non-equilibrium processes in the bulk and at the interface of SiSiO2 MIS-structures based on n-Si is investigated. It was found out that the presence of titanium impurities in the Si-wafer of MIS-structures leads to an increase in Nss and the appearance of three distinct peaks associated with the deep levels of Ti in Si.
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