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INTERACTION OF ISOVALENT DOPING OF GERMANIUM WITH NICKEL ATOMS IN SILICON
Journal: Science and world (Vol.1, No. 67)Publication Date: 2019-03-25
Authors : Utamuradova Sh.B. Daliev Kh.S. Nasriddinov S.S. Ergashev R.M.;
Page : 45-47
Keywords : silicon; doping; germanium; nickel; interaction; doping during growth; high-temperature diffusion.;
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Abstract
The interaction of germanium isovalent doping with nickel atoms in silicon is investigated. It is established that the presence of germanium atoms in the Si amount increases the efficiency of the formation of deep centers associated with nickel in Si. It was found that in the presence of Ge atoms, cryoannealing of the deep nickel centers
is slower compared with Si samples by a factor of 3–4.
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Last modified: 2019-04-05 19:15:01