Determination of the Electronic Temperature and the Electronic Density of Discharge Plasma

In the setting of characterization of discharge plasma we achieved a numerical survey on the experimental specters given by plasma of deposition on thin films of silicon. The purpose of this paper is to determine the electronic temperature and the electronic density of a discharge plasma provoked in the pure helium with a pressure of 0.1mb, a RF power (100-400W) and for positions (x = 0, x = 3 and x = 5). The shape of spectral line and the knowledge of the state of thermodynamic equilibrium of the medium are necessary to achieve our studies. We have used data from atomic physics databases for different elements of the medium as a basis (HeI, HeII, SiI, SiII), and theoretical and numerical model to calculate the different reasons of broadening (Natural, Doppler, Stark and experimental). The obtained results show that plasma is not at local thermodynamic equilibrium and the electronic temperature is close to values found in the literature.