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Dimensionless Current-Voltage Characteristics of Amorphous Semiconductor under Non-Constant Mobility Regime by Exact Method

Journal: International Journal of Science and Research (IJSR) (Vol.9, No. 12)

Publication Date:

Authors : ; ; ;

Page : 913-916

Keywords : Trapping States Carrier Mobility Energy Band Diagram Amorphous Semiconductor Disordered Solids;

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Inbox Write No Subject Roshni Pandey less thanroshnipandey31@gmail. comgreater than Wed, 16 Dec 2020 21: 50: 27 The three dimensionless variables are used to obtain the exact analytical expressions for the complete current-voltage characteristics for the single injection current flow in an amorphous semiconductors under non-constant mobility regime. The energy band model for linearly distributed states is considered for the dimensionless characteristics. It is shown that the complete current-voltage characteristics is obtained in a large change in current for a small change in applied voltage. The effect of space-charge-limited currents is understood in the complete span of current-voltage characteristics.

Last modified: 2021-06-28 17:17:01