FinFET- Benefits, Drawbacks and Challenges
Journal: International Journal of Engineering Sciences & Research Technology (IJESRT) (Vol.2, No. 11)Publication Date: 2013-11-30
Authors : Mayur Bhole; Aditya Kurude;
Page : 3219-3222
Keywords : FinFET; Dual- Gate; Tri-Gate; Quantum effects; Corner effects; Width quantization; Double Patterning.;
Abstract
FinFET is a promising alternative to conventional MOSFET - which has reached its limits and has too much leakage for too little performance gain. FinFET is being recommended as the basis for future IC processes because of its power/performance benefits, scalability, superior controls over short channel effects etc. However, it brings with itself new challenges andundesirable characteristics such as Corner effects, Quantum effects, Width quantization, Layout dependencies, additional parasitics etc. This paper discusses the major advantages, disadvantages and challenges of FinFET technology.
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